声光调Q Nd:YAG激光对硅划片的研究  

Study on Laser Scribing of Silicon Wafer with a Q switched Nd∶YAG Laser

作　　者：齐军[1] 王昆林[1] 梁绵长[1] 朱允明[2] 

机构地区：[1]清华大学机械工程系 [2]澳门大学科技学院

出　　处：《材料工程》1999年第3期45-48,共4页Journal of Materials Engineering

摘　　要：研究了利用调ＱＮｄＹＡＧ激光对硅片的激光划片，得出了刻槽深度和宽度与工艺参数之间的关系。还从理论上探讨了划片时激光束和材料的相互作用过程，推导了激光束使材料发生熔化和汽化时的能量密度阈值。Laser scribing of silicon wafer with a Q switched Nd∶YAG laser was studied and the relationship between process parameters and groove depth and width has been obtained The interaction process of laser beam and material was also analyzed theoretically and equation of laser energy density threshold induced material damage was deduced

关 键 词：激光划片 硅片 能量密度阈值 

分 类 号：TN305.1[电子电信—物理电子学]