氮化铝体单晶生长技术研究进展(英文)  

Development of bulk AlN single-crystal growth technology

作　　者：郑瑞生[1] 武红磊[1] 

机构地区：[1]深圳大学光电工程学院,深圳518060

出　　处：《深圳大学学报（理工版）》2010年第4期433-439,共7页Journal of Shenzhen University(Science and Engineering)

基　　金：supported by the National Basic Research Program of China(2010CB635115);the National Nature Science Foundationof China(60576005)~~

摘　　要：评述氮化铝体单晶生长技术中常用的金属铝直接氮化法、溶解生长法、氢化物气相外延法和物理气相传输法.指出氢化物气相外延法和物理气相传输法是前景看好的生长氮化铝体单晶方法.介绍本课题组对物理气相传输法的一些改进.认为生长大尺寸氮化铝单晶体的研究将集中在精确控制生长条件、选择合适的坩埚材料、优化制备工艺和制备优质氮化铝籽晶等方面.The research on bulk AlN single-crystal growth was reviewed.Attention was paid to four AlN crystal growth methods,which were direct nitridation of aluminum,solution growth,hydride vapor phase epitaxy（HVPE）growth,and physical vapor transport（PVT）growth.The technological process of each method is summarized and discussed,with a conclusion that the HVPE and PVT methods may be the most promising methods.Some improvements in the PVT growth technology made by our research team were presented.It is believed that,in order to grow large-size AlN single-crystal,further research should focus on precisely controlling the growth conditions,finding suitable inert crucible materials,finding best technical approach and process sequence,and preparing high-quality native AlN seed.

关 键 词：半导体材料 晶体生长 氮化铝 单晶体 宽禁带半导体 物理气相沉积 

分 类 号：O782[理学—晶体学]