利用MEMS技术研制硅脉象传感器  

Research on Silicon Pulse Sensor Fabricated by MEMS Techniques

作　　者：王璐[1,2] 温殿忠[1,2] 刘红梅[1,2] 田丽[3] 莫兵[3] 

机构地区：[1]黑龙江大学黑龙江省普通高等学校电子工程重点实验室,哈尔滨150080 [2]黑龙江大学集成电路重点实验室,哈尔滨150080 [3]哈尔滨工业大学MEMS中心,哈尔滨150001

出　　处：《传感技术学报》2010年第9期1226-1231,共6页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金资助(60676044);黑龙江省教育厅科学技术研究项目资助(11541266);黑龙江省普通高等学校电子工程重点实验室基金资助(DZZD20100037)

摘　　要：利用MEMS技术在N型<100>晶向的单晶硅衬底上设计并制作了以纳米硅/单晶硅异质结为源极和漏极的P-MOSFETs脉象传感器。在方形硅膜上制作四个以纳米硅/单晶硅异质结为源极和漏极P-MOSFETs,并将P-MOSFETs的沟道电阻设计成惠斯通电桥结构,从而实现对微小脉象信号的准确检测。实验结果表明,该硅脉象传感器在恒压源-3.0V供电条件下,灵敏度为1.623mV/kPa,准确度为2.029%F.S。A silicon pulse sensor is designed and fabricated on N-type 100 crystal silicon by MEMS techniques, in which the P-MOSFETs have the nc-Si/c-Si heterojunction as source and drain. Four P-MOSFETs which have the nc-Si/c-Si heterojunction as source and drain are fabricated in a square silicon film. The channel resistance of the nc-Si/c-Si heterojunction P-MOSFETs is designed as a Wheatstone bridge configuration and the silicon pulse sensor can accurately detect the small pulse signal. The experimental results show that the silicon pulse sensor has a sensitivity of 1.623 mV/kPa and a accuracy of 2.029%F·S under a constant voltage -3.0 V supply.

关 键 词：MEMS 硅脉象传感器 MOSFET 纳米硅/单晶硅异质结 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]