基于SiGe HBT的射频有源电感的设计  

Design of Radio Frequency Active Inductor Based on SiGe HBT

作　　者：尤云霞[1] 张万荣 金冬月[1] 谢红云[1] 沈珮[1] 陈亮[1] 丁春宝[1] 孙博韬[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《电子器件》2010年第4期424-427,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金项目资助(60776051;60376033);北京市自然科学基金项目资助(4082007);北京市教委科技发展计划项目资助(KM200710005015;KM200910005001);北京市属市管高校中青年骨干教师培养计划项目资助(102(KB)-00856);北京市优秀跨世纪人才基金项目资助(67002013200301)

摘　　要：基于回转器原理,提出利用两个SiGe异质结晶体管,通过采用不同组态构成四种射频有源电感,其中包括两种正电感和两种负电感,并对它们的性能进行了比较。结果表明,共射组态与共集组态构成的有源电感的性能最优异,并就此做了详细讨论。在带宽为1～15.8GHz的范围内,其电感值可以达到1nH以上,电感的品质因数最大值达到75.4。通过调节晶体管的偏置电压,有源电感的电感峰值在1.268nH-1.914nH范围内变化。电感值的可调谐性对增强电路设计的可复用性及灵活性具有现实意义。Based on the gyrator principle,four active inductors are constructed in two SiGe heterojunction bipolar transistors by different mode cascade.The performances of these active inductors with two positive and two negative inductances are compared.The results show that the active inductor which is constituted by the common-emitter configuration and common collector configuration is most excellent,which has been discussed in detail.For the 1～15.8 GHz bandwidth,the inductance can reach over 1 nH,and the maximum quality factor is about 75.4.By adjusting the bias voltage of the transistor,the peaks of inductance varies from 1.268 nH to 1.914 nH.The tunable capability of active inductors is of great practical significance for enhancing the reusability and flexibility of the circuits.

关 键 词：有源电感 回转器 品质因数 自谐振频率 

分 类 号：TM55[电气工程—电器]