双频段低噪声放大器的设计  

Design of a Dual-Band Low Noise Amplifier

作　　者：谢红云[1] 王文军[2] 张万荣 沈珮[1] 丁春宝[1] 尤云霞[1] 孙博韬[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100022 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《电子器件》2010年第5期582-586,共5页Chinese Journal of Electron Devices

基　　金：国家自然科学基金项目资助(60776051;61006044);北京市自然科学基金项目资助(4082007);北京市教委科技发展计划项目资助(KM200710005015;KM200910005001);北京工业大学教育教学研究项目资助(ER2009-B-11);北京工业大学学科与研究生教育创新人才培养计划资助(00200054Y4003)

摘　　要：适应多标准移动通信终端的迅速发展,设计了能够在800 MHz和1.8 GHz两个不同频段独立工作的低噪声放大器。放大器使用噪声性能优良的SiGe HBT管子,采用Cascode结构减小Miller电容的影响,发射极串联电感消除放大器输入端噪声系数和功率匹配的耦合,输入匹配电路采用单通道串并联LC电路,计算串并联电感和电容值,可以在两个工作频点发生谐振。输出端通过调整负载阻抗到50Ω,采用简单的电路实现功率输出。ADS的仿真结果表明,本文设计的低噪声放大器在800 MHz和1.8 GHz两个工作频段的S21分别达到了24.3 dB和21.3 dB,S11均达到了-13 dB,S22均在-27 dB以下,两个频段的噪声系数分别为3.3 dB和2.0 dB。To adapt to the rapid development of multi-standard mobile communication,a low noise amplifier（LNA） that can operate at two frequencies of 800 MHz and 1.8 GHz respectively was designed.SiGe HBTs with good noise performance were used in the design.The cascode circuit topology was adopted to reduce the Miller effect of the transistor.Inductor degeneration in emitter was introduced to generate the real part needed to match the input impedance and to decouple the input impedance from the noise factor.The input matching circuit can resonante at two frequencies.The component value was obtained through computing.The output matching circuit was realized by adjusting the load impedance to 50 Ω.The results simulated by ADS software show that the S21 reached 24.3 dB and 21.3 dB at the two frequencies respectively.Both S11 reach-13 dB simultaneously.Both S22 are lower than-27 dB.The noise figure at 800 MHz and 1.8 GHz are 3.3 dB and 2.0 dB respectively.

关 键 词：双频段 低噪声放大器 匹配 

分 类 号：TN722.75[电子电信—电路与系统]