GaAs(001)衬底上分子束外延生长InNSb单晶薄膜  

InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy

作　　者：张燕辉[1] 陈平平[1] 李天信[1] 殷豪[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《物理学报》2010年第11期8026-8030,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60876059);上海市基础研究重点项目(批准号:08JC1421000);上海市重大基础研究项目(批准号:09DJ1400101)资助的课题~~

摘　　要：利用射频氮等离子辅助分子束外延(RF-MBE)技术在GaAs(001)衬底上生长稀氮InNSb半导体薄膜,并通过原子力显微镜(AFM)、扫描电子显微镜(SEM)、X射线衍射仪(XRD)和拉曼散射光谱等测量手段对样品的微结构和N组分等进行了表征.结果显示样品有较好的晶体质量,N组分可高达0.84%(XRD的结果).本文还对样品的输运性质进行了表征,结果显示样品在室温下具有较低的载流子浓度和较高的迁移率.另外,初步研究表明在InSb中掺入N可导致其室温磁阻明显下降.InNSb alloy films are prepared on GaAs （001） substrates by the N2 radio frequency plasma-assisted molecular beam epitaxy （RF-MBE）.The N composition and the micro-structure of the samples are characterized by atom force microscopy （AFM）,scanning electron microscopy （SEM）,X-ray diffraction （XRD） and Raman spectroscopy.The measurement results reveal that the films have smooth surfaces and good crystalline quality,the N composition can reach 0.84% （from XRD） and most of the N atoms in the samples are at the sites of Sb atoms.The transport properties of the samples are also characterized,and the results demonstrate that our samples have lower carrier concentrations and higher mobilities.Owing to the introduction of N,a condside rable reduction of room-temperature magnetoresistance is observed.

关 键 词：分子束外延 稀氮半导体 X射线衍射 拉曼光谱 

分 类 号：TN304.055[电子电信—物理电子学]