Surface reconstructions and reflection high-energy electron diffraction intensity oscillations during homoepitaxial growth on nonmisoriented GaAs(111)B by MBE  

作　　者：杨瑞霞 武一宾 牛晨亮 杨帆 

机构地区：[1]School of Information Engineering,Hebei University of Technology [2]The 13th Electronic Research Institute,CETC

出　　处：《Journal of Semiconductors》2010年第11期1-4,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.61076004);the Natural Science Foundation of Hebei Province,China(No.E2009000050)

摘　　要：The growth by molecular beam epitaxy of high quality GaAs epilayers on nonmisoriented GaAs（111）B substrates is reported.Growth control of the GaAs epilayers is achieved via in situ,real time measurement of the specular beam intensity of reflection high-energy electron diffraction（RHEED）.Static surface phase maps of GaAs（111）B have been generated for a variety of incident As flux and substrate temperature conditions.The dependence of GaAs（111）B surface reconstruction phases on growth parameters is discussed.The（191/2×191/2） surface reconstruction is identified to be the optimum starting surface for the latter growth of mirror-smooth epilayers.Regimes of growth conditions are optimized in terms of the static surface phase diagram and the temporal RHEED intensity oscillations.The growth by molecular beam epitaxy of high quality GaAs epilayers on nonmisoriented GaAs（111）B substrates is reported.Growth control of the GaAs epilayers is achieved via in situ,real time measurement of the specular beam intensity of reflection high-energy electron diffraction（RHEED）.Static surface phase maps of GaAs（111）B have been generated for a variety of incident As flux and substrate temperature conditions.The dependence of GaAs（111）B surface reconstruction phases on growth parameters is discussed.The（191/2×191/2） surface reconstruction is identified to be the optimum starting surface for the latter growth of mirror-smooth epilayers.Regimes of growth conditions are optimized in terms of the static surface phase diagram and the temporal RHEED intensity oscillations.

关 键 词：GaAs（111）B RHEED surface reconstruction EPILAYER 

分 类 号：TN304.23[电子电信—物理电子学]