云南高校图书馆联盟文献共享服务平台- EPILAYER

EPILAYER: 作品数：28被引量：12H指数：2; 导出分析报告; 相关领域：电子电信理学更多>>; 相关作者：王宝强曾一平朱占平段瑞飞更多>>; 相关机构：中国科学院更多>>; 相关期刊：《Chinese Physics Letters》《Semiconductor Photonics and Technology》《Journal of Semiconductors》《IMP & HIRFL Annual Report》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划福建省自然科学基金河北省自然科学基金更多>>

High-performing silicon-based germanium Schottky photodetector with ITO transparent electrode: 《Chinese Physics B》2021年第3期447-453,共7页Zhiwei Huang Shaoying Ke Jinrong Zhou Yimo Zhao Wei Huang Songyan Chen Cheng Li; Project supported by the National Key Research and Development Program of China(Grant No.2018YFB2200103);the National Natural Science Foundation of China(Grant No.61474094);Principal Fund of Minnan Normal University(Grant No.KJ2020006).; A near-infrared germanium(Ge)Schottky photodetector(PD)with an ultrathin silicon(Si)barrier enhancement layer between the indium-doped tin oxide(ITO)electrode and Ge epilayer on Si or silicon-on-insulator(SOI)is propo...; 关键词：silicon-based Schottky photodetector germanium epilayer indium-doped tin oxide

Storage and transfer of optical excitation energy in GaInP epilayer:Photoluminescence signatures: 《Journal of Materials Science & Technology》2019年第7期1364-1367,共4页Shijie Xu Ying Huang Zhicheng Su Rongxin Wang Jianrong Dong Deliang Zhu; supported by the National Natural Science Foundation of China (Grant No. 11374247);in part by a grant from the University Grants Committee Areas of Excellence Scheme of the Hong Kong Special Administrative Region, China (Project No. [AoE/P-03/08]); GaInP alloy could be the most trusted key material for fabricating super-high-efficiency single-and multijunction solar cells, especially for space applications. The storage and transfer of optical excitation energy i...; 关键词：GAINP alloy PHOTOLUMINESCENCE Energy transfer PHOTON recycling

Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures被引量：1: 《Chinese Physics B》2018年第12期499-503,共5页Shuang-Tao Liu Jing Yang De-Gang Zhao De-Sheng Jiang Feng Liang Ping Chen Jian-Jun Zhu Zong-Shun Liu Wei Liu Yao Xing Li-Yuan Peng Li-Qun Zhang Wen-Jie Wang Mo Li; Project supported by the the Science Challenge Project of China(Grant No.TZ2016003);the National Natural Science Foundation of China(Grant Nos.61674138,61674139,61604145,61574135,61574134,61474142,and 61474110);Beijing Municipal Science and Technology Project(Grant No.Z161100002116037); In this work, we study the influence of carrier gas H2flow rate on the quality of p-type GaN grown and annealed at lower temperatures. It is found that the concentration of H atoms in Mg-doped GaN epilayer can effecti...; 关键词：p-type GaN thermal annealing H atom state

Influence of Triangle Structure Defect on the Carrier Lifetime of the 4H-SiC Ultra-Thick Epilayer被引量：2: 《Chinese Physics Letters》2018年第7期77-80,共4页钮应喜汤晓燕贾仁需桑玲胡继超杨霏吴军民潘艳张玉明; Supported by the National Key Research and Development Program of China under Grant No 2016YFB0400500; Effect of triangle structure defects in a 180-μm-thick as-grown n-type 4H-SiC homoepitaxial layer on the carrier lifetime is quantitatively analyzed, which is grown by a horizontal hot-wall chemical vapor deposition ...

Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD被引量：2: 《Journal of Semiconductors》2016年第6期15-20,共6页闫果果张峰钮应喜杨霏刘兴昉王雷赵万顺孙国胜曾一平; supported by the National High Technology R&D Program of China(No.2014AA041402);the National Natural Science Foundation of China(Nos.61474113,61274007,61574140);the Beijing Natural Science Foundation of China(Nos.4132076,4132074);the Program of State Grid Smart Grid Research Institute(No.SGRI-WD-71-14-004);the Youth Innovation Promotion Association of CAS; Chloride-based fast homoepitaxial growth of 4H-SiC epilayers was performed on 4° off-axis 4H-SiC substrates in a home-made vertical hot-wall chemical vapor deposition（CVD） system using H2-SiH4-C2H4-HCl.The effect o...; 关键词：4H-SiC epilayer chemical vapor deposition homoepitaxial growth growth rate

Properties of n-Ge epilayer on Si substrate with in-situ doping technology: 《Chinese Physics B》2016年第6期355-359,共5页黄诗浩李成陈城钊王尘谢文明林抒毅邵明聂明星陈彩云; Project supported by the National Basic Research Program of China(Grant No.2013CB632103);the National Key Technology Support Program of China(Grant No.2015BAF24B01);the Natural Science Foundation of Fujian Province of China(Grant No.2016J05147);the Key Sci-Tech Research and Development Platform of Fujian Province,China(Grant No.2014H2002);the Provincial University Foundation of Fujian Province,China(Grant No.JK2013030);the Educational Youth Key Foundation of Fujian Province,China(Grant No.JA13210);the Scientific Research Fund of Fujian University of Technology,China(Grant No.GY-Z14073); The properties of n-Ge epilayer deposited on Si substrate with in-situ doping technology in a cold-wall ultrahigh vacuum chemical vapor deposition（UHVCVD） system are investigated.The growth temperature of 500℃ is o...; 关键词：in-situ doping technology GERMANIUM epitaxial growth

Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE: 《Chinese Physics B》2015年第12期346-351,共6页吕海燕牟奇张磊吕元杰冀子武冯志红徐现刚郭其新; Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20120131110006);the Key Science and Technology Program of Shandong Province;China(Grant No.2013GGX10221);the Key Laboratory of Functional Crystal Materials and Device(Shandong University;Ministry of Education);China(Grant No.JG1401);the National Natural Science Foundation of China(Grant No.61306113);the Major Research Plan of the National Natural Science Foundation of China(Grant No.91433112);the Partnership Project for Fundamental Technology Researches of the Ministry of Education;Culture;Sports;Science and Technology;Japan; Excitation power and temperature-dependent photoluminescence（PL） spectra of the ZnTe epilayer grown on（100）Ga As substrate and ZnTe bulk crystal are investigated. The measurement results show that both the structu...; 关键词：PHOTOLUMINESCENCE ZnTe bulk crystal ZnTe epilayer defect or impurity-related emissions

Effect of the thickness of InGaN interlayer on a-plane GaN epilayer: 《Chinese Physics B》2015年第2期357-361,共5页王建霞汪连山张谦孟祥岳杨少延赵桂娟李辉杰魏鸿源王占国; supported by the National Natural Science Foundation of China(Grant Nos.91233111,61274041,and 11275228);the Special Funds for Major State Basic Research Project of China(Grant No.2012CB619305);the National High Technology R&D Program of China(Grant Nos.2014AA032603 and2014AA032609);the Guangdong Provincial Special Fund for LED Industrial Development,China(Grant No.2012A080302003); In this paper,we use the a-plane InGaN interlayer to improve the property of a-plane GaN.Based on the a-InGaN interlayer,a template exhibits that a regular,porous structure,which acts as a compliant effect,can be obta...; 关键词：non-polar a-plane GaN InGaN interlayer peel-off metalorganic chemical vapor deposition

Characterization of tetragonal distortion in a thick Al_(0.2)Ga_(0.8)N epilayer with an AlN interlayer by Rutherford backscattering/channeling: 《Chinese Physics B》2014年第9期354-357,共4页王欢姚淑德; supported by the National Natural Science Foundation of China(Grant No.91226202); An Al0.2Ga0.8N/AlN/Al0.2Ga0.8N heterostructure was grown by metalorganic chemical vapor deposition on a sapphire （0001） substrate with a thick （〉 1 μm） GaN intermediate layer. The Al composition was determined b...; 关键词：ALGAN Rutherford backscattering/channeling elastic strain

Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition被引量：1: 《Chinese Physics B》2013年第5期449-452,共4页刘波张森尹甲运张雄文敦少博冯志红蔡树军; Project supported by the National Natural Science Foundation of China (Grant No. 60876009); The effect of an initially grown high-temperature A1N buffer （HT-A1N） layer＇s thickness on the quality of an A1N epilayer grown on sapphire substrate by metalorganic chemical vapor deposition （MOCVD） in a two-ste...; 关键词：AIN epilayer high-temperature （HT） buffer atomic force microscopy （AFM） DISLOCATION

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

EPILAYER

检索结果分析

下载全文

高级检索检索式检索

时间限定

期刊范围

学科限定全选

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

EPILAYER

检索结果分析

下载全文

用户登录

高级检索检索式检索