Mathematical modeling of nanoscale MOS capacitance in the presence of depletion and energy quantization in a poly-silicon gate  

作　　者：Amit Chaudhry J.N.Roy 

机构地区：[1]Institute of Engineering and Technology,Panjab University [2]Solar Semiconductor Pvt.Ltd.

出　　处：《Journal of Semiconductors》2010年第11期5-8,共4页半导体学报（英文版）

摘　　要：A model has been developed to study the effect of depletion and energy quantization at the poly-silicon /oxide interface on the behavior of a nanometer scale n-MOSFET.A model of inversion charge density,including the inversion layer quantization using the variation approach in the substrate,has also been produced.Using the exact calculations of the polygate potential under the depletion and quantization conditions,a C-V model has been developed. All the results have been compared with the numerical models reported in existing literature and they show good agreement.A model has been developed to study the effect of depletion and energy quantization at the poly-silicon /oxide interface on the behavior of a nanometer scale n-MOSFET.A model of inversion charge density,including the inversion layer quantization using the variation approach in the substrate,has also been produced.Using the exact calculations of the polygate potential under the depletion and quantization conditions,a C-V model has been developed. All the results have been compared with the numerical models reported in existing literature and they show good agreement.

关 键 词：BSIM inversion layers MOS devices QUANTIZATION poly-depletion poly-quantization 

分 类 号：TN386.1[电子电信—物理电子学]