用边界元素法模拟FP-JTE终端结构  

SIMULATION OF THE FP JTE PLANAR JUNCTION TERMINATION WITH A BOUNDARY ELEMENT METHOD

作　　者：武自录[1] 罗晋生[1] 

机构地区：[1]西安交通大学微电子工程系

出　　处：《计算物理》1999年第2期192-198,共7页Chinese Journal of Computational Physics

基　　金：国家自然科学基金

摘　　要：提出了一种无须进行电离积分的用于高压结终端模拟的边界元素法，分析了界面电荷对ＦＰＪＴＥ终端结构击穿电压的影响，结果表明击穿电压几乎与界面电荷浓度呈线性关系。A 2 D boundary element method is introduced for the simulation of high voltage Junction termination.With the concept of critical electric field,this method does not need to perform ionization integral.The effect of interface charge to the breakdown voltage of FP JTE junction termination has been analyzed.The result shows that the breakdown voltage almost linearly depends on the density of interface charge,and the field plate can suppress the breakdown voltage sensitivity to interface charge.

关 键 词：边界元 场板 平面结终端 终端扩展 集成电路 

分 类 号：TN405[电子电信—微电子学与固体电子学]