GaP:N LED p型层厚度的优化  

OPTIMIZATION OF THICKNESS OF p LAYER IN GaP∶N LED

作　　者：李桂英[1,2] 杨锡震[1,2] 王亚非 李永良 赵普琴 孙寅官 

机构地区：[1]北京师范大学分析测试中心 [2]中国科学院半导体研究所半导体材料科学开放实验室

出　　处：《发光学报》1999年第1期1-3,共3页Chinese Journal of Luminescence

摘　　要：实测数据表明：ＧａＰＮ发光二极管（ＬＥＤ）ｐ型层厚度ｄ为１２～１７μｍ时，管芯光强最高．ｄ增大，一方面可使表面复合的影响减小，提高内量子效率；另一方面又会使内吸收增大，降低抽取效率．综合考虑这两方面的影响，选取有关参数。From the experimental results, it is clear that luminescence intensity of the wafer reaches the maximum, when the thickness of p type layer ( d ) in a GaP∶N light emitting diode is in a range of 12～17μm. Increasing d the effect of the surface recombination might be compressed, making the internal quantum efficiency to be increased. At the same time, it might increase the internal absorption, resulting in a decrease of the extraction efficiency. Combining the two factors, and using the resonable values of the relevant parameters, a rational explanation for the optimum value of d measured experimentally is obtained.

关 键 词：结构优化 发光二极管 磷化镓 厚度 P型层 

分 类 号：TN364[电子电信—物理电子学]