纳米SiC蓝光发射的研究  

A STUDY OF BLUE EMISSION FROM NANO SiC POWDERS

作　　者：刘渝珍[1,2] 黄允兰[1,2] 石万全[1,2] 刘世祥[1,2] 姚德成[1,2] 张庶元[1,2] 韩一琴[1,2] 陆忠乾[3] 谭寿洪[3] 江东亮[3] 

机构地区：[1]中国科学技术大学研究生院 [2]中国科学技术大学 [3]中国科学院上海硅酸盐研究所

出　　处：《发光学报》1999年第1期50-54,共5页Chinese Journal of Luminescence

基　　金：中国科技大学研究生院院长择优基金

摘　　要：在４．６８ｅＶ的激光激发下，室温ＣＶＤ合成的纳米ＳｉＣ粉体，可发射４７５ｎｍ的蓝光，经６００～１１００℃在Ｎ２气氛下进行快速退火（ＲＴＡ）处理，其荧光强度随退火温度升高而增强，当Ｔ≥９００℃时，荧光强度下降，但发光峰位与退火温度无关．通过ＸＲＤ、ＩＲ、ＴＥＭ、ＸＰＳ等研究。The nanometer SiC powders of 8～10nm were synthesized by CVD at 1100℃. A blue luminescence peaked at 2 61eV (～475nm) were observed from the SiC powders at room temperature. The powders were annealed at 600～1000℃ in dry N 2 atmosphere by the rapid thermal annealing (RTA). The peak intensity of blue luminescent increases as RTA temperature and decreases when the annealing temperature is higher than 900℃. With XRD, IR, TEM, XPS analysis, we concluded that the blue PL emission is caused by oxygen deficiency defects in the SiC/SiO x interface.

关 键 词：蓝色荧光 快速热退火 纳米级 碳化硅粉体 

分 类 号：TN304.24[电子电信—物理电子学]