Si_(1-y)C_y合金的固相外延生长及其特性  

SOLID PHASE EPITAXY OF Si 1-y C y ALLOY AND ITS CHARACTERISTICS

作　　者：于卓[1] 余金中[1] 成步文[1] 雷震霖[1] 李代宗[1] 王启明[1] 梁骏吾[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《发光学报》1999年第1期60-64,共5页Chinese Journal of Luminescence

摘　　要：采用固相外延的方法在Ｓｉ（１００）衬底上生长了Ｃ组分为０．５ａｔ．％的Ｓｉ１－ｙＣｙ合金，并对合金的质量及特性进行了测试分析．采用多重离子注入的方法，并利用ＳｉＯ２做缓冲层，能够获得满意的Ｃ离子分布．小束流、长时间的注入方法能避免β－ＳｉＣ相的出现，最大限度地抑制动态退火效应．对Ｓｉ衬底进行非晶化预处理能显著提高代位Ｃ原子的比例．两步退火过程能有效地减少注入前沿的点缺陷。Si 1-y C y alloy with carbon composition of 0.5at.% was successfully grown on Si(100) substrate by solid phase epitaxy recrystallization. The result was presented in this paper. With the help of the SiO 2 cap layer, rather uniform carbon profile in amorphous Si layer was obtained by dual energy implantation. Since ion flow was small and implantaion time was long enough, respectively, the emergency of β SiC was avoided and the dynamic annealing effect was depressed. The pre amorphization of the Si substrate increased the fraction of the substitutional C and the two step annealing reduced point defects. As a result, Si 1-y C y alloy with high quality was recrystallized on Si substrate.

关 键 词：硅碳合金 半导体 离子注入 固相外延 晶体质量 

分 类 号：TN304.2[电子电信—物理电子学] TN304.054