半导体InAs量子点单光子发射器件  

Semiconductor InAs quantum dot single-photon emission devices

作　　者：牛智川[1] 孙宝权[1] 窦秀明[1] 熊永华[1] 王海莉[1] 倪海桥[1] 李树深[1] 夏建白[1] 

机构地区：[1]中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083

出　　处：《物理》2010年第11期737-745,共9页Physics

基　　金：国家自然科学基金(批准号:10734060;90921015;60676054);国家重点基础研究发展计划(批准号:2006CB921504;2007CB921904)资助项目

摘　　要：文章概述了量子点单光子源的研究现状,综述了微腔量子点耦合单光子发射器件制备中关键的低密度InAs量子点外延技术,单量子点单光子发射二阶关联函数HBT检测方法,分布布拉格反馈微腔结构的制备以及实现液氮温度下电驱动微腔量子点单光子发射器件等研究结果.Recent progress in the development of single -photon source devices is reviewed. The epitaxial growth of low density InAs self-assembled quantum dots, Hanhury Brown and Twiss measurements of the second order correlation functions of the luminescence from InAs single quantum dots, and the fabrication of distributed feedback Bragg microcavity structures are discussed. Electrically driven single-photon emission devices operated at liquid nitrogen temperatures have been successfully realized.

关 键 词：单光子 量子点 二阶关联函数 微腔 

分 类 号：O471.1[理学—半导体物理]