(Ga,In)As半导体MOVPE生长过程中源物质的热分解及半导体碳污染的分析  

Analysis of Pyrolysis of Precursor and Carbon Contamination in MOVPE Process of (Ga,In)As Alloy Semiconductor

作　　者：李长荣[1,2] 王冈[1,2] 李静波[1,2] 张维敬 

机构地区：[1]北京科技大学材料科学与工程学院 [2]北京有色金属研究总院

出　　处：《稀有金属》1999年第3期209-213,共5页Chinese Journal of Rare Metals

基　　金：国家"863"计划重点项目

摘　　要：运用相平衡分析的方法，对（Ｇａ，Ｉｎ）Ａｓ半导体ＭＯＶＰＥ生长过程中源物质热分解后的气相物种分压进行了分析，得到了沉积物种的生成率随各生长参数的变化规律，同时对气相物种分压与半导体碳污染的关系也进行了分析。The partial pressures of various gaseous species after the precursors decompose were calculated. The regulation of generation rate of each deposition species changed with each growth parameters was obtained, and the relationship between the partial pressure of various gaseous species and carbon contamination of semiconductor was considered. In the above analysis, the method of phase equilibrium analysis was applied.

关 键 词：半导体 热分解 碳污染 MOVPE 砷化镓 砷化铟 

分 类 号：TN304.23[电子电信—物理电子学]