退火温度对电子束蒸发的ZnS薄膜性能的影响  

Influence of annealing temperature on properties of ZnS thin films prepared by electron-beam evaporation

作　　者：赖松林[1] 程树英[1] 黄红梁[1] 林珊[1] 

机构地区：[1]福州大学物理与信息工程学院微纳器件与太阳能电池研究所,福建福州350108

出　　处：《电子元件与材料》2010年第11期55-57,共3页Electronic Components And Materials

基　　金：福建省科技厅重点资助项目(No.2008I0019);福建省自然科学基金资助项目(No.2009J01285);福建省教育厅资助项目(No.JB09010)

摘　　要：为了获得光电性能好的ZnS窗口层薄膜,采用电子束蒸发法在玻璃基片上沉积ZnS薄膜,研究退火温度（200－500℃）对ZnS薄膜的结构和光电性能的影响。结果表明：所制备的薄膜均为闪锌矿结构的β-ZnS多晶薄膜,导电类型为n型。随着退火温度的增高,薄膜结晶度和光电性能都变好。但是,当退火温度过高（500℃）时,薄膜的半导体特性反而变差。退火温度为400℃时,ZnS薄膜的性能最佳,此时薄膜的透过率较高;电阻率较低,为246.2Ω·cm。In order to obtain good photoelectric properties of ZnS window layer thin film,ZnS thin films were deposited on glass substrates by electron-beam evaporation method,and the effect of annealing temperature（200~500 ℃） on the structure and photoelectric properties of obtained thin films was investigated.The results show that the prepared thin films are polycrystalline β-ZnS with sphalerite structure,and they are of n-type conduction.With the increase of the annealing temperature,the crystallinity and photoelectric properties of the thin films become better.But,when the annealing temperature is too high（500 ℃）,the semiconducting properties of the thin films become worse.At annealing temperature of 400 ℃,ZnS thin films have the optimum properties with higher transmittance and lower resistivity of 246.2 Ω·cm.

关 键 词：ZNS薄膜 电子束蒸发 退火温度 光电性能 

分 类 号：TN304[电子电信—物理电子学]