直流磁控反应溅射制备Al_2O_3薄膜的工艺研究  

Study on Technology for Al_2O_3 Thin Films by DC Magnetron Reactive Sputtering

作　　者：杨和梅[1] 陈云富[1] 徐秀英[1] 

机构地区：[1]南京农业大学工学院机械系,南京210031

出　　处：《科学技术与工程》2010年第32期7881-7885,共5页Science Technology and Engineering

基　　金：江苏省农机局项目(gxz09010)资助

摘　　要：应用直流磁控反应溅射技术在不锈钢基体上制备Al2O3薄膜,研究了溅射气压、氧气流量和基体温度对Al2O3薄膜的沉积速率和膜基结合力的影响规律。结果表明,随着压力的增大,沉积速率和膜基结合力先增大后减小。在压力为1.0Pa时最大;随着氧气流量的增加,沉积速率和膜基结合力也随之不断减小;随着温度的升高,沉积速率和膜基结合力略有下降。利用扫描电子显微镜观察了薄膜与基体界面及薄膜的表面微观形貌,薄膜与基体的结合性好,薄膜表面晶粒大小均匀,组织致密。Al2O3 films were prepared by DC magnetron reactive sputtering technique on stainless steel substrate. The influence of the sputtering pressure,oxygen flux,and substrate temperature for the deposition rate and binding force between the substrate and Al2O3 films were studied. The results show that： with the increase of sputtering pressure,the deposition rate and the binding force initially increase and then decrease after reaching a maximum at 1.0 Pa; with oxygen flow increasing the deposition rate and the binding force decrease; the deposition rate and the binding force decrease slightly with the substrate temperature increasing. The interface between the film and substrate and the surface morphology of the film were observed by SEM. The results show that the film and substrate have a good combination. Besides,the surface particles possess uniform size and the organization of the film is dense.

关 键 词：直流磁控反应溅射 氧化铝薄膜 工艺研究 沉积速率 

分 类 号：O484[理学—固体物理] TB43[理学—物理]