多孔硅衬底上无催化剂制备GaN纳米线  

Catalyst-free Synthesis of GaN Nanowires on Porous Silicon

作　　者：杨玮[1] 吕小毅[2] 吴荣[1] 郑毓峰[1] 孙言飞[1] 简基康[1] 

机构地区：[1]新疆大学物理科学与技术学院,新疆乌鲁木齐830046 [2]西安交通大学电子与信息工程学院,陕西西安710049

出　　处：《新疆大学学报（自然科学版）》2010年第4期469-472,共4页Journal of Xinjiang University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(No.10864004;No.50862008);新疆大学博士启动基金资助项目(No.BS080109);自治区高校科研计划科学研究重点项目(XJEDU2008I05)

摘　　要：采用化学气相沉积(CVD)法,在1050℃的温度下,以多孔硅(PS)为衬底,成功地制备出GaN纳米线.采用X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线能量色散谱(EDS)和光致发光(PL)谱对样品的物相、形貌、成分及发光性质进行了分析.研究结果表明,产物为六方纤锌矿结构的GaN纳米线,纳米线的直径范围为30nm到100nm,长度达几十微米,位于376.2nm处有一带边发射峰,在435.8nm处有一个因缺陷引起的弱发光峰.最后简单讨论了制备GaN纳米线的相关化学反应和生长机制.Gallium nitride （GaN） Nanowires was grown on porous silicon （PS） substrates by chemical vapor deposition （CVD） at temperature of 1050℃without the presence of catalyst. The products were characterized by X-Ray diffraction （XRD）, scanning electron microscopy （SEM）,X-Ray energy dispersive spectrometer （EDS） and Photo Luminescence （PL）.The results showed that the products are compose a large quantity of GaN nanowires with hexagonal wurtzite structure. Their diameters were in the range of 30-100nm and the length could be up to several micrometers. In the PL spectrum of the GaN nanowires, a band-edge emission was observed at 376.2nm and one weak defect-related emission at 435.8nm was detected. The growth mechanism of GaN nanowires and related reactions were also discussed.

关 键 词：化学气相沉积法 GAN 纳米线 多孔硅 

分 类 号：O782.1[理学—晶体学]