硅衬底Bi4Ti3O12和Bi3.25La0.75Ti3O12铁电薄膜的慢正电子束研究  

Study of Bi_4Ti_3O_(12) and Bi_(3.25)La_(0.75)Ti_3O_(12) ferroelectric films with Si substrate by variable-energy positron beam

作　　者：王耘波[1] 高俊雄[1] 郭冬云[1,2] 于军[1] 魏龙 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074 [2]武汉理工大学材料学院,湖北武汉430070 [3]高能物理研究所核分析技术实验室,北京100049

出　　处：《功能材料》2010年第11期1876-1878,1882,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(60971008)

摘　　要：对硅衬底生长的Bi4Ti3O12和Bi3.25La0.75Ti3O12薄膜样品测量了慢正电子多普勒展宽谱,得到了S参数随正电子注入能量的变化。通过对S参数和W参数的分析,讨论了这类材料中的捕获态特征和结构特点,结果表明,薄膜与硅衬底界面的缺陷为空位-氧复合体,La的掺杂有助于阻止空位-氧复合体向界面的扩散。A series Doppler broadening spectra of Bi4Ti3O12 and Bi3.25La0.75Ti3O12 ferroelectric films deposited on silicon substrate were measured by means of variable-energy positron beam,the positron implantation energy dependence of shape parameter S were performed.The S（E） and W（E） data are analyzed dy plotting them in the S-W plane,the positron trapping states related to the structure of the samples are discussed.The results indicate that for the both samples the defects on the interface region between ferroelectric film and Si substrate are of multivacancy-multioxygen complexes（VxOy） type.It also implies the doping of lanthanum is helpful to increase the diffusion resistance of the defects.

关 键 词：慢正电子束 多普勒展宽谱 BI4TI3O12铁电薄膜 缺陷 

分 类 号：O474[理学—半导体物理]