用PECVD制备高抗腐蚀性能SiN_x薄膜的工艺研究  

The study on technology for high corrosion-resistant SiN_x thin film deposited by plasma enhanced chemical vapor deposition

作　　者：刘瑞文[1] 焦斌斌[1] 欧毅[1] 陈大鹏[1] 

机构地区：[1]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029

出　　处：《功能材料》2010年第11期1907-1910,共4页Journal of Functional Materials

基　　金：国家高技术研究发展计划(863计划)资助项目(2007AA04Z323)

摘　　要：研究了一种可抗高温强碱溶液腐蚀的氮化硅薄膜的等离子增强化学气相淀积(PECVD)生长工艺。通过X射线光电子能谱(XPS)、椭圆偏振仪、湿法腐蚀等手段分析了所生长薄膜的元素含量、折射率、抗腐蚀特性等性质随淀积工艺条件的改变所产生的变化。制备出的氮化硅薄膜可在高温强碱溶液(70℃、33.3%KOH溶液)中支撑12h而无明显变化,并实现自支撑全镂空薄膜。The technology for high corrosion-resistant SiNxthin film deposited by plasma enhanced chemical vapor deposition（PECVD） was studied.The refractive index and film composition were studied by ellipsometer and X-ray photoelectron spectroscopy（XPS）.Wet etching studies were conducted using alkaline solution.The results indicted that the deposition parameters have great influence on the performance of corrosion resistance.SiNxthin film with high corrosion-resistance has been deposited,the thin film can endure 12h in high-temperature alkaline solution（70℃,33.3% KOH solution）without significant change,and accomplish self-supporting and full-hollow thin film finally.

关 键 词：等离子增强化学气相淀积(PECVD) SiNx薄膜 湿法腐蚀 

分 类 号：TB321[一般工业技术—材料科学与工程]