温度对离子束溅射生长Ge/Si量子点的形貌影响  

The effect of temperature on the morphology of Ge/Si quantum dots grown by ion beam sputtering

作　　者：张学贵[1] 王茺[1] 杨杰[1,2] 潘红星[1] 鲁植全[1] 李亮[1] 杨宇[1] 

机构地区：[1]云南大学工程技术研究院光电信息材料研究所,云南昆明650091 [2]昆明理工大学冶金与能源工程学院,云南昆明650093

出　　处：《功能材料》2010年第11期1982-1985,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(10964016);云南省自然科学基金重点资助项目(2008CC012);教育部科学技术研究重点资助项目(2010ME208)

摘　　要：采用离子束溅射技术,在不同温度的Si(100)衬底上生长了一系列Ge量子点样品,利用AFM和Raman光谱对样品表面形貌和结构进行表征,结果表明,随着温度升高,量子点密度增大(750℃生长的量子点密度达到1.85×1010cm-2),均匀性变好及结晶性增强;但随生长温度升高,Si-Ge互混程度也同时加剧。A serial of Ge quantum dot samples were grown by ion beam sputtering on Si（100）substrate at different temperature.The surface morphology and structure were studied with AFM and Raman spectra,our results indicated that with temperature increasing,the density of quantum dots increased（At temperature of 750℃,the density of the quantum dots was up to 1.85×10^10cm^-2）,the distribution of the quantum dots became more ordered,and the crystallinity became better.But the alloying processing was enhanced at the same time.

关 键 词：离子束溅射 量子点 表面形貌 RAMAN光谱 

分 类 号：O484.1[理学—固体物理]