Cr掺杂ZnO薄膜晶体结构及光学性能的研究  

Studies on Structure and Optical Properties of Cr-doped ZnO Thin Films

作　　者：付长凤[1] 韩连福[1] 刘超[1] 陈希明[2] 

机构地区：[1]东北石油大学电子科学学院,大庆163318 [2]天津理工大学电子信息工程学院薄膜电子与通信器件重点实验室,天津300191

出　　处：《材料导报》2010年第22期46-49,共4页Materials Reports

基　　金：黑龙江省归国留学基金(LC2009C11);天津市自然科学基金(06YFJZJC00100)

摘　　要：采用磁控溅射法在载玻片上制备了不同Cr掺杂浓度的ZnO薄膜,并对其紫外发光性能做了初步研究。XRD结果表明,所制备的样品具有纤锌矿结构,呈c轴择优取向生长;透射谱表明,改变Cr掺杂浓度可以使ZnO薄膜的吸收边向短波方向移动,并且薄膜的禁带宽度连续可调;光致发光(PL)谱表明,所有样品的PL谱由发光中心位于370nm的紫外发光峰组成,且该峰的峰位蓝移,与吸收边缘移动的结果吻合。2.0%(原子分数,下同)的Cr掺杂可以提高ZnO的紫外发光强度,而过量的Cr掺杂反而会降低其紫外发光强度。Cr-doped ZnO thin films have been deposited on glass substrates using magnetron sputtering meth od. The compositions, crystallographic structures and optical properties of the thin films are investigated by means of energy dispersive X-ray photoelectron spectrum, X-ray diffraction and PL spectra, respectively. The results show that the sputtered thin films with a preferential c-axis orientation exhibit the wurtzite structure. Optical transmittance properties display that the absorption edges of Cr-doped ZnO films shift to the shortwave direction and the band gap energies are continuously adjustable with increasing dopant concentration. Besides, it is found from the photolumine scence（PL） measurement that the ultraviolet emission peaks of the samples spectrum occur at 370nm. The peak of ul- traviolet emission has a blue shift to region of higher photon energy when the contents of Cr in ZnO thin films in- crease, which is coincident with those values calculated by the linear fitting from the transmittance data. It is also found that the intensity of ultraviolet emission has been remakably improved when Cr content is approximately 2. 0at%,but it is desereased when doping concentration of Cr is excessively high.

关 键 词：CR掺杂 ZNO薄膜 蓝移 磁控溅射法 

分 类 号：TN304.21[电子电信—物理电子学]