氢等离子体处理SiC表面技术的研究  

Study of SiC Surface Cleaning by Hydrogen Plasma

作　　者：陈素华[1] 张春丽[1] 

机构地区：[1]许昌学院电信学院,河南许昌461000

出　　处：《半导体技术》2010年第11期1087-1090,共4页Semiconductor Technology

摘　　要：对SiC表面进行传统湿法清洗之后,采用电子回旋共振(ECR)氢等离子体系统在200℃低温条件下对SiC表面进行了氢等离子体处理,对处理前后的SiC样品表面分别做了反射高能电子衍射(RHEED)分析和X射线光电子能谱(XPS)分析。通过RHEED分析发现,经过氢等离子体处理的SiC表面比传统湿法清洗的SiC表面平整度更高,而且实验发现氢等离子体处理SiC表面时间越长,SiC表面平整度越高。通过XPS分析发现,SiC表面氧的含量显著减少,C/C—H化合物被去除,从而显著提高了SiC的抗氧化能力。The SiC surfaces were cleaned by the hydrogen plasma with ECR-PEMOCVD plasma system at low temperature of 200 ℃ after the traditional wet cleaning.The SiC surfaces were investigated by RHEED and XPS before and after hydrogen plasma treatment.The RHEED analysis shows that the SiC surfaces by hydrogen plasma treatment are much flatter than those by traditional wet cleaning.The result shows that the longer the time is,the flatter the surface is.The XPS spectra examinations indicate that the surface oxides reduce obviously and the C/C—H compounds on the SiC surface are removed by hydrogen plasma treatment,so the antioxidant ability of the SiC surface is improved.

关 键 词：碳化硅 氢等离子体 反射高能电子衍射 X射线光电子能谱 电子回旋共振 

分 类 号：TN305.2[电子电信—物理电子学]