化学机械抛光的理论模型研究综述  

Study the chemical mechanical polishing on sapphire substrate

作　　者：黄传锦[1] 周海[1] 陈西府[1] 

机构地区：[1]盐城工学院机械工程学院,盐城224051

出　　处：《机械设计与制造》2010年第11期256-258,共3页Machinery Design & Manufacture

基　　金：江苏省自然科学基础研究项目(BK2008197);江苏省科技厅科技攻关项目(BE2007077);盐城工学院应用基础研究项目:LED衬底基片无损伤表面加工技术研究

摘　　要：化学机械抛光(Chemical Mechanical Polishing,CMP)是当今唯一能够提供全局平面化的技术,其抛光机理的研究是当前的热点。综述了考虑抛光液和抛光垫特性的抛光机理模型,分析了各模型的相关特点,最后对CMP模型的发展和研究方向提出展望。Chemical-mechanical polishing（Chemical Mechanical Polishing,CMP）is currently only able to provide the global planarization technology,its mechanism of polishing is currently the most popular. A survey of some models was given which consider the polishing properties of polishing liquid and polishin pads,and the relevant characteristics of each model was analyzed,at last the development and research directions of the CMP model was prospected.

关 键 词：化学机械抛光 平坦化 抛光率 抛光垫 

分 类 号：TH16[机械工程—机械制造及自动化]