P型稀磁半导体材料的居里温度  

Curie temperature of P-type diluted magnetic semiconductor materials

作　　者：关玉琴[1] 陈余[1] 赵春旺[1] 

机构地区：[1]内蒙古工业大学理学院,呼和浩特010051

出　　处：《粉末冶金材料科学与工程》2010年第5期521-524,共4页Materials Science and Engineering of Powder Metallurgy

基　　金：国家自然科学基金资助项目(10862002);内蒙古工业大学校基金(X200930)

摘　　要：稀磁半导体(DMS)材料日益受到科技界和工业界的关注。本文根据ZENER模型研究稀磁半导体材料的居里温度。计算结果证明:同种基质材料掺杂不同的金属元素,低价元素掺杂形成的DMS材料居里温度较高。在考虑反铁磁性交换作用时,低价元素掺杂形成的DMS材料的居里温度与高价元素掺杂形成的DMS材料的居里温度的差别,比不考虑反铁磁性交换作用时居里温度的差别更为明显,且差别随反铁磁性交换作用相对强度的增加而增加。该研究结果可为获得具有高居里温度的DMS材料提供参考。The scientific and technological as well as industrial circles are of increasing concern to diluted magnetic semiconductor（DMS） materials.In the present,based on the ZENER model,the Curie temperature of the DMS materials was studied.The results show that the Curie temperature of the DMS materials formed by doping with low-valence elements is higher in the cases when the matrix material doped with different kinds of metallic elements.When the antiferromagnetic exchange coupling is considered,the difference between the Curie temperatures of DMS materials formed by doping low-valence elements and high-valence elements respectively becomes more obvious than that of the case where antiferromagnetic exchange coupling is absent.In addition,this difference increases with the increasing of relative strength for the antiferromagnetic exchange coupling.The present study may serve as a reference for obtaining high Curie temperature DMS materials.

关 键 词：稀磁半导体 居里温度 掺杂浓度 反铁磁性交换作用 

分 类 号：O47[理学—半导体物理]