薄膜生长的随机模型  

A RADOM MODEL OF THIN FILM GROWTH 

作　　者：刘祖黎[1] 魏合林[1] 王汉文 王均震[1] 

机构地区：[1]华中理工大学物理系

出　　处：《物理学报》1999年第7期1302-1308,共7页Acta Physica Sinica

基　　金：国家自然科学基金

摘　　要：利用ＭｏｎｔｅＣａｒｌｏ模型研究了薄膜生长初始阶段岛的形貌与基底温度之间的关系，同时还研究了它们与汽相粒子入射剩余能量之间的关系．模型中考虑了三种动力学过程：粒子入射、吸附粒子扩散和粒子脱附，与以前薄膜生长模型的不同之一在于把入射过程看作独立于其他过程，而扩散和脱附过程是相互关联的．结果表明随基底温度的升高，岛的形貌经历了一个从分散生长、分形生长到凝聚生长的变化过程．低温下随汽相粒子入射和剩余能量增加。Abstract The relationship between temperature of substrate and island morphology at the early phase of thin film growth has been investigated using Monte Carlo model.The relationship between island morphology and rest energy of vapor phase particles has also been obtained.Three kinds of dynamic processes,i.e.adsorption,diffusion and desorption are considered.The difference between our model and the previous one is that the impingement is considered to be independent of other processes,and the diffusion and desorption are correlated with each other.The results indicate that with increasing temperature,the island morphology evolves from dispersed growth,fractal growth to dense growth.At low temperatures,with increasing energy of vapor phase particles,the same evolution of island morphology is also observed.

关 键 词：薄膜生长 随机模型 蒙特卡洛模型 

分 类 号：O484.1[理学—固体物理]