考虑对流效应和磁场的CMP模型及其数值模拟  

THE MODELS BY CONSIDERING MAGNETIC FIELD AND CONVECTION OF CHEMICAL MECHANICAL POLISHING AND THEIR NUMERICAL SIMULATIONS

作　　者：郑秋云[1] 李明军[1] 舒适[1] 

机构地区：[1]湘潭大学数学与计算科学学院,科学工程计算与数值仿真湖南省重点实验室,湘潭411105

出　　处：《力学学报》2010年第6期1060-1067,共8页Chinese Journal of Theoretical and Applied Mechanics

基　　金：国家自然科学基金(10771178);国家自然科学基金委员会-中国工程物理研究院联合基金(10676031);国家“863”高技术惯性约束聚变专题,教育部博士点基金(20070530003);教育部重点项目(208093)资助~~

摘　　要：推导了具有对流效应的化学机械抛光(chemical mechanical polishing,CMP)润滑模型,研究各参数对压力场分布的影响.在此模型基础上,研究了磁流体抛光液在外界磁场作用下的润滑模型,以及外磁场对抛光过程中压力场分布的影响.数值结果表明,具有对流效应的润滑模型的压力分布与已有经验结果更一致,能更为有效地解释CMP过程中的负压现象;进一步通过外界磁场的作用,可以有效地改变磁流体CMP的压力分布,这为实现对晶片的全局抛光提供了一种可供参考的新途径.Chemical mechanical polishing（CMP） is one of the most effective technologies in modern ultra-precision processing.In this paper,firstly,we deduce the model of CMP with convection effects,and research the pressure distribution by changing different parameters.Then,we consider the model of CMP under the magnetic fluid slurry and external magnetic field,and research the pressure distribution in the external magnetic field.The numerical results show that pressure distribution of the model with convection is more consistent with the known empirical results,and more efficiently explain the sub-ambient pressure in the CMP.The results also show that we can efficiently change the distribution of pressure by external magnetic field,so these technologies can provide a new referenced way for the wafer＇s global planarization.

关 键 词：化学机械抛光 润滑模型 磁流体 (抛光液)对流效应 晶片 

分 类 号：O361.3[理学—流体力学]