宽温超高频双极静电感应晶体管研制  

Development of Large Temperature Range High Frequency BSIT

作　　者：丛众[1] 王荣[1] 吴春瑜[1] 闫东梅 王大奇 

机构地区：[1]辽宁大学电子科学与工程系

出　　处：《半导体技术》1999年第2期24-27,共4页Semiconductor Technology

摘　　要：描述了宽温超高频ｐｎｐ双极静电感应晶体管的结构、工作原理、设计与制造。测试结果表明，环境温度从２３℃升到１８０℃时，器件的ｈＦＥ随温度平均变化率小于４０％，优于同类型的常规双极结型晶体管，平均改善３０％。In this paper we describe the structure,operating principle,design and fabrication of the new high frequency BSIT device with large temperature range.The tested results show that the average changing rate of h FE of the new device is less than 40% when temperature is raised from 23℃ up to 180℃,which is 30% better than that of the normal bipolar transistor.

关 键 词：双极静电感应 本征栅势垒 沟道宽度 BSIT 晶体管 

分 类 号：TN386.7[电子电信—物理电子学]