双极型静电感应晶体管的温度特性  

Temperature Property of Bipolar Static Induction Transistor

作　　者：朱淑玲 姜岩峰[1] 

机构地区：[1]兰州大学物理系

出　　处：《半导体技术》1999年第2期30-32,35,共4页Semiconductor Technology

摘　　要：通过双极型静电感应晶体管（ＢＳＩＴ）与普通双极型晶体管（ＢＪＴ）温度特性的对比，研究了ＢＳＩＴ的温度特性。由实验看出，影响ＢＳＩＴ温度特性的主要因素是载流子迁移率μ和由源极越过势垒的电子数目ｎ。以此可解释几个在观察ＢＳＩＴ温度特性时所遇到的现象。The temperature property of BSIT is discussed here through the contrast with popular BJT.From the result of experiments two points that have great influence on temperature property of BSIT are concluded:one is the mobility μ ,the other is the number of electronics n which is poured into channel from the source.From the above,some phenomena of temperature property of BSIT can be explained.

关 键 词：双极型 静电感应晶体管 温度特性 迁移率 BSIT 

分 类 号：TN386.7[电子电信—物理电子学]