双量子阱系统伏安特性的数值模拟  

Numerical Simulation of Current Voltage Characteristics in a Double Quantum Well System

作　　者：李存志[1] 罗恩泽[1] 梁昌洪 

机构地区：[1]西安电子科技大学物理系

出　　处：《真空电子技术》1999年第2期5-9,共5页Vacuum Electronics

摘　　要：本文通过求解薛定谔方程得到由分段线性势垒构成的量子系统的变换矩阵和透射系数的精确解，并利用这一结果计算了双量子阱系统的偏压隧道电流，讨论了双量子阱系统结构变化对其伏安特性的影响。与单量子阱系统的比较表明，双量子阱系统在某些方面，如电流峰谷比，负微分电阻区等优于单量子阱系统。The transfer matrix and transmission coefficient are obtained in a quantum system consisting of piecewise linear potential barriers by solving Schrdinger equations.The bias tunnel current in a double quantum well system is calculated and the effect of the double quantum well structure on its current voltage characteristics is studied.A comparison with a single quantum well system shows that the double quantum well system is superior to the single quantum well system in some aspects,including the peak to valley current ratio and the negative differential resistance range.

关 键 词：双量子阱系统 负微分电阻 伏安特性 数值模拟 

分 类 号：TN103[电子电信—物理电子学]