宽温高频高反压沟道基区晶体管研制  

Study and Fabrication of Channel Base Transistor with Wider Temperature Range,High Frequency and High Breakdown Voltage

作　　者：丛众[1] 吴春瑜[1] 王荣[1] 石广元[1] 闫东梅 张雯[1] 朱肖林 汪永生 

机构地区：[1]辽宁大学电子科学与工程系 [2]成都星光电工厂

出　　处：《电子学报》1999年第5期53-55,共3页Acta Electronica Sinica

基　　金：电子工业部科技开发项目

摘　　要：耗尽基区双极晶体管也称为双极静电感应晶体管（ＢＳＩＴ），其电流放大系数（ｈＦＥ）具有负的温度系数．双极结型晶体管（ＢＪＴ）的ｈＦＥ具有正的温度系数．将ＢＳＩＴ与ＢＪＴ并联，采用ＢＪＴ常规平面工艺制造了宽温高频高反压沟道基区双极ＰＮＰ晶体管．本文描述了这种新器件结构、工作原理、设计与制造．新器件突出特点是：当温度变化较大时，ｈＦＥ漂移较小．测试结果表明：环境温度从２５℃升到１８０℃时，器件的ｈＦＥ随温度Ｔ的变化率小于３５％．优于同类型的常规双极结型晶体管，平均改善２０％．当温度从２５℃降到－５５℃，器件的ｈＦＥ变化率小于或等于３０％．Using the normal planar technology of bipolar junction transistor,we have fabricated the p n p high frequency,high breakdown voltage transistors which can operate in the wider temperature range from -55℃ to 180℃.In this paper we also describe the design,structure and fabrication of the new device with a smaller drift of h FE when temperature is changed.The tested results show that the changing rate of h FE of the new device is less than or equal to 35% when temperature is raised from 25℃ up to 180℃,which is 20% better than that of the normal bipolar transistor;whereas the changing rate of h FE is less than or equal to 30% when temperature is fallen from 25℃ down to -55℃.

关 键 词：耗尽基区 静电感应 本征栅 双极晶体管 BSIT 

分 类 号：TN322.802[电子电信—物理电子学]