中远红外非线性晶体材料CdSe生长及光学性能研究  

Growth and optical properties of mid- and far-IR nonlinear crystal material CdSe

作　　者：吴海信[1] 黄飞[1] 倪友保[1] 王振友[1] 陈林[1] 程干超[1] 

机构地区：[1]中国科学院安徽光学精密机械研究所,安徽合肥230031

出　　处：《量子电子学报》2010年第6期711-715,共5页Chinese Journal of Quantum Electronics

摘　　要：红外非线性晶体材料CdSe具有透光波段宽广,吸收系数低等优点,在中长波尤其是8～12μm红外波段的频率转换方面有广阔的应用前景,目前已引起国外众多科研机构的极大重视。采用高温元素反应法直接合成CdSe多晶料,利用温度梯度熔体区熔法生长出CdSe单晶,晶体棒毛坯尺寸达Φ19×70 mm;通过X射线粉末衍射、感应耦合等离子体质谱等对多晶原料进行成分分析,原料纯度可达5N;利用低倍率红外显微镜、红外分光光度计检测了晶体的基本光学性能,3～20μm波段晶体平均吸收系数α约为0.08 cm^(-1),品质良好,已能满足激光实验要求。The infrared nonlinear crystal CdSe has attracted more attention recently because of its special optical properties, including low optical losses and long wave high tunability efficiency at λ 〉 μm with non-multi-phonon absorption, making it one of the leading candidates for use as nonlinear optics devices for frequency conversion, especially 8 - 12 μm. CdSe polymaterial was gained by element reaction directly at high temperature, then single crystal was grown with temperature gradient solution zoning （TGSZ） method, and crystal with 19 mm in diameter and 70 mm in length was obtained. The polymaterials were studied by X-ray power diffraction （XRD） and ICP-MS methods to check the purity, and the single crystal slices were investigated by infrared microscope and spectrophotometer,which showed that the absorption coefficient α is about 0.08 cm^-1 among 3 - 20 μm, so it can be used as elements in some laser experiments.

关 键 词：材料 CDSE 温度梯度熔体区熔法 单晶生长 非线性 

分 类 号：O782[理学—晶体学]