用于制备ZnO薄膜的金属有机化学气相沉积设备的研制  

Design of MOCVD system for preparing ZnO thin films

作　　者：安其[1] 王红雪 陈素君[1] 

机构地区：[1]北京北仪创新真空技术有限公司,北京102600

出　　处：《真空》2010年第6期15-18,共4页Vacuum

摘　　要：介绍了一种制备ZnO薄膜的金属有机化学气相沉积(MOCVD)设备,制备的ZnO薄膜主要用作太阳能电池的背反射电极。该设备的极限压力可达5×10-5 Pa,膜厚均匀性偏差在5%以内,薄膜电阻率约为10-2Ω.cm。本文叙述了设备的用途,技术性能,工作过程和结构特点。并对ZnO薄膜的电阻率与参加反应的水蒸汽流量的关系进行了简单介绍。An MOCVD（Metal Organic Chemical Vapor Deposition） system was designed to prepare ZnO thin films to be used as the back reflection electrode of thin film solar cell.The ultimate pressure of the deposition chamber is up to 5×10-5Pa,the thickness uniformity deviation of the film prepared is less than 5% with a resistivity about 10-2Ω·cm.The application,technical performance,working process and structural characteristics of the system are introduced.Describes briefly the relationship between the resistivity of ZnO film and the throughput of reacting water vapor.

关 键 词：金属有机化学气相沉积(MOCVD) ZnO透明导电膜 薄膜太阳电池 电阻率 

分 类 号：TB43[一般工业技术]