反应磁控溅射沉积ITO膜工艺稳定性的研究  

Research on the Stability of Process Technology for Depositing ITO Films in the Circumstance of Reactive Magnet Controlled Sputtering

作　　者：胡云慧[1] 彭传才[1] 黄广连[1] 

机构地区：[1]国防科技大学八达薄膜技术研究所

出　　处：《真空》1999年第2期33-36,共4页Vacuum

摘　　要：在Ｉｎ－Ｓｎ合金靶反应磁控溅射的情形下，固定基片温度、氧分压、抽速和其它相关条件，仅靠改变溅射电流来沉积一定方阻的ＩＴＯ膜。实验表明：随着工艺过程的进行，溅射电流总要呈现逐渐增加的趋势。本文分析了产生这种现象的种种原因，并指出影响工艺稳定的一个非常重要的因素是Ｉｎ－Ｓｎ合金靶本身。Abstract In the circumstance of reactive magnet controlled sputtering, substrate temperature、oxygen pressure、pumping speed and other related conditions are fixed, sputtering current is only changed to deposit ITO films of certain square resistance. Experiments demonstrate:sputtering current has to be increased little by little to maintain constancy of square resistance. This paper analyzes the cause and points out one of the important causes influenced on the stability of process technology comes from target of In Sn alloy itself.

关 键 词：反应磁控溅射 稳定性 ITO膜 锡铟氧化物 薄膜 

分 类 号：O484.1[理学—固体物理] TB43[理学—物理]