热激励硅基双梁谐振型压力传感器  

Thermal Excited Si-Based Dual-Beam Resonant Pressure Sensor

作　　者：梅勇[1] 张正元[2] 李健根[1] 李小刚[1] 冯志成[2] 

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060 [2]模拟集成电路重点实验室,重庆400060

出　　处：《微电子学》2010年第6期890-892,共3页Microelectronics

基　　金：国家高技术研究发展(863)计划基金资助项目(2008AA04Z302)

摘　　要：针对热激励硅基谐振型压力传感器温度漂移严重的问题,提出了一种双梁硅基谐振型压力传感器结构,利用不测试压力的谐振梁感应温度对谐振梁的变化,并与测试压力的谐振梁相减,消除测试压力的谐振梁随温度变化的部分,补偿热激励硅基谐振型压力传感器的温度漂移。通过实验,研制出双梁结构的硅基谐振型压力传感器样品,初步测试结果显示,温度漂移的影响已降低到原来的1/30,大大提高了热激励硅基谐振型压力传感器的测试精度。A Si-based resonant pressure sensor structure with dual-beam was proposed to solve the problem of serious temperature drift in thermal excited Si-based resonant pressure sensor.In this structure,temperature variation sensed by non-pressure-sensing resonant beam was subtracted from that sensed by pressure-sensing beam,to cancel variations of the pressure-sensing beam with temperature and compensate for temperature drift of thermal-excited Si-based resonant pressure sensor.A prototype of Si-based resonant pressure sensor with dual-beam was developed.Preliminary test results showed that the effect of temperature drift was reduced to 1/30 of the uncompensated device,greatly improving sensing accuracy of thermal excited Si-based resonant pressure sensor.

关 键 词：压力传感器 谐振梁 硅/硅键合 三维体加工 

分 类 号：TN402[电子电信—微电子学与固体电子学] TP212.1[自动化与计算机技术—检测技术与自动化装置]