不同注入剂量和能量对氧化钛薄膜结构的影响  

Effect of Implantation Dose and Energy on Structure of Titanium Oxide Films

作　　者：王锦标[1] 杨苹[1] 李贵才[1] 陈江[1] 孙鸿[1] 黄楠[1] 

机构地区：[1]西南交通大学材料先进技术教育部重点实验室,四川成都610031

出　　处：《西南交通大学学报》2010年第6期920-925,共6页Journal of Southwest Jiaotong University

基　　金：国家973计划资助项目(2005CB623904);国家863计划资助项目(2006AA02A139);国家自然科学基金资助项目(20603027)

摘　　要：为研究离子注入以及真空退火对氧化钛薄膜的结构和性能影响,利用非平衡磁控溅射技术,在单晶硅基体上沉积得到了金红石氧化钛薄膜,在此基础上注入磷离子,并进行真空退火处理.研究结果表明：注入剂量和能量的增加,使得氧化钛薄膜的晶体结构损伤程度加剧;真空退火后,未注入与离子注入的薄膜Ram an峰均出现红移和加宽现象,薄膜能带结构因氧缺位及低价钛而产生的变化,导致薄膜的方块电阻逐渐降低,电阻可降至100~200Ω/cm2.In order to investigate the influences of ion implantation and vacuum annealing on the structure and properties of titanium oxide（TiO2） film,rutile titanium oxide film was synthesized on Si wafer using the unbalance reactive magnetron sputtering method,and then modified by phosphorus ion implantation and succeeding vacuum annealing.The experimental results show that an increase in implantation dose and energy will aggravate the damage to the crystalline structure of the film.After vacuum annealing,a broadening and red shift occurred to Raman peaks for both the implanted and unimplanted titanium oxide films,and the sheet resistance of the film decreased to 100200 Ω/cm2,because of the energy band structure change caused by oxygen defects and low-valent titanium.

关 键 词：氧化钛薄膜 离子注入 能带结构 氧缺陷 方块电阻 

分 类 号：O484.4[理学—固体物理]