PMOSFET的动态NBTI效应模型研究  

Study on modeling of dynamic NBTI effect in PMOSFET

作　　者：李斌[1] 宋芳芳[1] 解江[2] 章晓文[2] 

机构地区：[1]华南理工大学电子与信息学院,广东广州510640 [2]工业与信息化部电子第五研究所,广东广州510610

出　　处：《华中科技大学学报（自然科学版）》2010年第12期24-27,共4页Journal of Huazhong University of Science and Technology(Natural Science Edition)

基　　金：电子元器件可靠性物理及其应用技术国家级重点实验室基金(9140C0301030901)

摘　　要：为了能够准确地预测器件的寿命,研究了PMOSFET中的动态负偏压温度不稳定性效应(NBTI)模型.在静态NBTI效应模型及反应-扩散模型(R-D)的基础上,推导出动态NBTI应力下界面陷阱电荷模型,其与占空比成指数关系.考虑到占空比对器件NBTI效应的影响,推导出动态NBTI应力下阈值电压退化模型.通过实验所得到的器件退化数据和仿真数据进行比较分析,证明了阈值电压漂移量随着占空比近似按照指数规律变化,与模型相符合,可以预测器件交流应力的实际寿命.The modeling of negative bias temperature instability（NBTI） effect was investigated to predict the lifetime of devices accurately.Based on the static NBTI model and the reaction-diffusion（R-D） mechanism,an expression for the interface trapped charges shift under dynamic operation was derived,which was exponential relation with duty cycle.Considering the dependence of NBTI on duty cycle,modeling of the threshold voltage shift was deduced under dynamic operation.The threshold voltage shift which was exponential relation with duty cycle was verified by the experimental data and the simulation results agree with NBTI effect model.The lifetime of devices can be predicted under dynamic operation.

关 键 词：负偏压温度不稳定性效应 可靠性 阈值电压漂移 占空比 寿命 P金属氧化物半导体场效应晶体管 

分 类 号：TN306[电子电信—物理电子学] TN386.1