一种基于砷化镓衬底的高峰——谷电流比的共振隧穿二极管  

High Peak-To-Valley Current Ratio Resonant Tunneling Diode Based on GaAs Substrate

作　　者：高振萍[1] 蔡一鸣[1] 

机构地区：[1]江西工业工程职业技术学院,江西萍乡337055

出　　处：《煤炭技术》2010年第12期56-57,共2页Coal Technology

摘　　要：基于砷化镓高性能共振隧道二极管(RTD)结构采用分子束外延技术生长。其结构与普通的RTD不同,这种RTD在砷化铝势垒顶层交界处增加了一层Al0.24Ga0.76As主势垒层。在室温下,这种RTD偏压下峰—谷电流比(PVCR)达到4.68,其最高峰值电流密度为12.4kA/cm2。GaAs-based resonant tunneling diode（RTD） structure of high quality is grown by molecular beam epitaxy.Its structure is different from that of conventional RTDs in that an Al0.24Ga0.76As ＂chair barrier＂ is added adjacent to the top AlAs barrier layer.At room temperature,the RTDs fabricated have a high peak-to-valley current ratio（PVCR） of 4.68 under forward bias.The highest peak current density for these diodes at room temperature is 12.4kA/cm2.

关 键 词：主势垒 共振隧道二极管 PVCR 

分 类 号：TM315.3[电气工程—电机]