A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region  

作　　者：何进 刘峰 周幸叶 张健 张立宁 

机构地区：[1]School of Electronics and Information,Nantong University [2]The Key Laboratory of Integrated Microsystems,School of Computer & Information Engineering,Peking University Shenzhen Graduate School [3]TSRC,Institute of Microelectronics,School of Electronic Engineering and Computer Science,Peking University

出　　处：《Chinese Physics B》2011年第1期501-506,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.60876027);the Open Funds of Jiangsu Province Key Lab of ASIC Design(JSICK1007)

摘　　要：A continuous yet analytic channel potential solution is proposed for doped symmetric double-gate （DG） MOSFETs from the accumulation to the strong-inversion region. Analytical channel potential relationship is derived from the complete 1-D Poisson equation physically, and the channel potential solution of the DG MOSFET is obtained analytically. The extensive comparisons between the presented solution and the numerical simulation illustrate that the solution is not only accurate and continuous in the whole operation regime of DG MOSFETs, but also valid to wide doping concentration and various geometrical sizes, without employing any fitting parameter.A continuous yet analytic channel potential solution is proposed for doped symmetric double-gate （DG） MOSFETs from the accumulation to the strong-inversion region. Analytical channel potential relationship is derived from the complete 1-D Poisson equation physically, and the channel potential solution of the DG MOSFET is obtained analytically. The extensive comparisons between the presented solution and the numerical simulation illustrate that the solution is not only accurate and continuous in the whole operation regime of DG MOSFETs, but also valid to wide doping concentration and various geometrical sizes, without employing any fitting parameter.

关 键 词：MOSFETS TRANSISTORS doping modeling double-gate （DG） 

分 类 号：TN386.1[电子电信—物理电子学] TN383.1