3英寸半绝缘4H-SiC单晶的研制  

Bulk Growth of the Semi-Insulating 3-inch 4H-SiC

作　　者：王利杰[1] 冯玢[1] 洪颖[1] 孟大磊[1] 王香泉[1] 严如岳[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2011年第1期8-10,共3页Semiconductor Technology

摘　　要：报道了采用物理气相传输（PVT）法进行SiC单晶生长方面取得的最新进展，成功研制得到固态微波器件急需的3英寸（75mm）半绝缘4H-SiC衬底。使用计算机模拟技术，进行了3英寸（75mm）4H—SiC晶体生长的热场设计，并在此基础上研制出适合3英寸（75mm）4H．SiCPVT生长的晶体生长设备，采用喇曼光谱对晶体生长表面5点进行测试，结果均为单一的4H晶型，采用非接触电阻率面分布（COREMA）方法测得晶片电阻率为10^9-10^12ΩQ·cm。微管道缺陷（MPD）测量采用熔融KOH腐蚀法，测得平均微管道密度为104个／cm。，其中晶片的30％区域微管道缺陷小于10个／cm2使用x射线双晶衍射测试得到其半高宽（FWHM）为31arcsec，说明所获得的晶体具有良好的结晶完整性。The latest progress in the growth of the silicon carbide （SiC） by physical vapor transport （PVT） were reported. The 3-inch semi-insulating 4H-SiC substrate for microwave devices was successfully achieved. Using computer simulation technology, the thermal field of crystal growth was designed and the growth equipment of 3-inch 4H-SiC was developed. The polytype of the crystal was determined with Raman spectroscopy. The results show that 5 points on the as-grow surface are the single 4H polytype. The resistivity of the wafer is 109 - 10~2 ~ ~ cm measured by SemiMap COREMA-WT （contactless resistivity mapping）. The crystallinity of the grown crystal was characterized by the molten KOH etching and X-ray rocking curve. The micropipe defects density （MPD） is averagely 104 cm-2, but in the 30% region of the wafer, the MPD is lower than 10 era-2. The full width at half maximum （FWHM） is 31 arcsee measured by double-crystal XRD, the result shows that the crystalline quality is very good.

关 键 词：3英寸(75 mm) 4H—SiC 电阻率 微管道缺陷 半高宽 

分 类 号：TN304.24[电子电信—物理电子学]