膜厚对NiO/NiFe/Cu/NiFe磁阻效应的影响  

The Influence of Thickness of Thin Films on MR Effect of NiO/NiFe/Cu/NiFe Spin Valve

作　　者：吴丹丹[1] 李佐宜[1] 邱进军[1] 卢志红[2] 

机构地区：[1]华中理工大学电子科学与技术系 [2]中国科学院上海冶金研究所

出　　处：《华中理工大学学报》1999年第7期74-76,共3页Journal of Huazhong University of Science and Technology

基　　金：教育部部门开放研究实验室"上海交通大学薄膜与微细技术实验室"资助

摘　　要：用射频磁控溅射方法制备多层膜，研究了双层膜ＮｉＯ／ＮｉＦｅ的矫顽力Ｈｃ和交换耦合场Ｈｅｘ与反铁磁层ＮｉＯ、铁磁层ＮｉＦｅ厚度的关系，结果表明：ＮｉＯ厚度为７０ｎｍ时，Ｈｅｘ最大；Ｈｃ随ＮｉＯ厚度增大而增大．当ＮｉＦｅ厚度增加时，Ｈｅｘ近似线性减小；而Ｈｃ则随ＮｉＦｅ厚度增大开始有缓慢增加，然后才减小．对于ＮｉＯ（７０ｎｍ）／ＮｉＦｅ（ｔ１）／Ｃｕ（２．２ｎｍ）／ＮｉＦｅ（ｔ２）自旋阀多层膜材料（括号内的量表示厚度），研究了ＮｉＦｅ膜厚度对磁阻效应的影响，结果表明：被钉扎层ＮｉＦｅ的厚度为３ｎｍ，自由层ＮｉＦｅ的厚度为５ｎｍ时，ＭＲ值最大，约为１．６％．Spin valves multi layer was fabricated by RF magnetron sputtering. The influence of thickness of anti ferromagnetic layer NiO and ferromagnetic layer NiFe on H c and H ex of NiO/NiFe double layer was studied. The result showed that the biggest H ex was obtained when the thickness of NiO layer was 70 nm and H c was increasing as thickness of NiO was increasing. When thickness of NiFe was increasing, H ex was approximately decreasing lineally, but H c was slowly increasing at first and decreasing later. The influence of thickness of NiFe layer on MR effect in NiO(70nm)/NiFe( t 1)/Cu(2.2nm)/NiFe( t 2) was also studied. The result showed that the maximum MR value 1.6% was attained while thickness of pinned layer NiFe and free layer are 3nm and NiFe 5nm respectively.

关 键 词：磁阻效应 膜厚 多层膜 氧化镍 铜 镍铁合金 

分 类 号：O484.43[理学—固体物理]