中子辐照 GaAs 缺陷的退火行为研究  

Study on Rapid Annealing Behavior of GaAs Defects Induced by Neutron Irradiation

作　　者：刘键[1] 王佩璇[2] 张灶利[2] 

机构地区：[1]中国科学院高能物理研究所,北京100080 [2]北京科技大学材料物理系,北京100083

出　　处：《稀有金属》1999年第5期336-339,共4页Chinese Journal of Rare Metals

摘　　要：采用霍尔测量、沟道卢瑟福背散射（ 沟道 Ｒ Ｂ Ｓ） 以及低温光荧光方法对中子辐照 Ｇａ Ａｓ 缺陷的快速退火行为进行了研究。嬗变杂质锗未能全部激活的原因之一是部分锗原子占据砷位形成受主。在快速退火过程中可形成反位缺陷 Ｇａ Ａｓ（ Ｅｖ ＋ ２００ ｍｅ Ｖ） 以及复合缺陷 Ｉ Ｇａ － Ｖ Ａｓ 。Abstract: The rapid annealing behavior of GaAs defects induced by neutron irradiation were studied by the methods of Hall measurement, Tunnel Rutherford back Scattering and low temperature photoluminescence. The results show that one of the reasons that transmuted Ge atoms are not perfectly activated is that some of atoms Ge locate at the As sites and act as acceptors. In the process of the rapid annealing, antisite defects Ga As ( E v+200 meV) and complex defects I Ga -V As are formed, where I is impurities.

关 键 词：中子辐照 砷化镓 退火 反位缺陷 复合缺陷 

分 类 号：TN304.23[电子电信—物理电子学]