光电流法测试技术及其应用  

Technique and Application of the Photocurrent method

作　　者：郭小兵[1] 周智慧[1] 胡恺生 张绵[2] 

机构地区：[1]电子部46所,天津市55信箱300192 [2]电子部13所,河北石家庄179信箱050051

出　　处：《现代仪器》1999年第4期32-33,18,共3页Modern Instruments

摘　　要：本文介绍了可从0.7～4.0μm(1.77～0.31eV)进行波长扫描的光电流测试系统及其技术特点,测量了GaAs和InP样品的深能级,这些数据同有关文献测量的结果基本一致。In this article the photocurrent method using illumination from 0. 7μm to 3. 5μm and its technical characteristic have been introduced. Deep levels of some samples,such as GaAs and InP,have been measured. The similar levels are also found in some other foreign articles.

关 键 词：光电流法 深能级 砷化镓 磷化铟 测试技术 

分 类 号：TN304.23[电子电信—物理电子学]