PL Mapping在SI-GaAs材料与器件性能关系研究中的应用  

Study on the application of PL Mapping to the relationship between SI-GaAs crystal and device property

作　　者：李光平[1] 汝琼娜[1] 李静[1] 何秀坤[1] 王寿寅 陈祖祥 胡春风 

机构地区：[1]电子工业部第四十六研究所,天津55信箱300192 [2]北京伯乐分析生化仪器有限公司,北京知春路14号100088

出　　处：《现代仪器》1999年第4期38-41,共4页Modern Instruments

摘　　要：本文详细研究了扫描光荧光谱(PL Mapping)在半绝缘砷化镓(SI-GaAs)材料与器件性能关系中的应用,实验结果表明SI-GaAs单晶的 PL Mapping均匀性对器件性能有着至关重要的影响,所以在为制备器件选择优质的SI-GaAs材料时,除了电阻率、迁移率、位错密度、碳含量、EL2浓度及其均匀性外,PL Mapping也是表征材料质量的一个重要参数。In this paper,We have studied the application of PL Mapping to the relationship between SI-GaAs crystal and device property in detail. The experiment results show that PL Mapping of SI-GaAs crystal plays an important role in determining the performance of device. When selecting high quality SI-GaAs crystal for fabricating deviice,PL Mapping homogeneity is an important parameter besides resistivity,mobility,EPD,carbon concentration,EL2 concentration and their homogeneity.

关 键 词：扫描光荧光谱 砷化镓 器件 半导体 

分 类 号：TN304.23[电子电信—物理电子学]