离子束溅射制备Bi2Te3热电薄膜  

Preparation of Bi_2Te_3 thermoelectric thin films by ion beam sputtering

作　　者：范平[1] 郑壮豪[1] 梁广兴[1] 张东平[1] 蔡兴民[1] 

机构地区：[1]深圳大学物理科学与技术学院,薄膜物理与应用研究所,深圳市传感器技术重点实验室,深圳518060

出　　处：《深圳大学学报（理工版）》2011年第1期84-88,共5页Journal of Shenzhen University(Science and Engineering)

基　　金：广东省自然科学基金资助项目(7009409)~~

摘　　要：采用离子束溅射技术,溅射不同面积比例的Bi/Te二元复合靶,制备Bi2Te3热电薄膜,所制备的薄膜Bi∶Te原子比接近2∶3.X射线衍射测量结果显示,薄膜的主要衍射峰与Bi2Te3标准衍射峰相同,在(015)晶面上择优选向明显,存在少量的Bi和[Bi,Te]杂质峰.霍尔系数测试及Seebeck系数测量结果表明,薄膜都为n型半导体薄膜,电导率量级为105Sm-1,电学性能良好.在不同条件下制备的薄膜Seebeck系数最大值为-168μVK-1,最小值为-32μVK-1.其中,Bi∶Te原子比为0.69,退火温度为300℃的薄膜功率因子最大,达1.1×10-3Wm-1K-2.The Bi2Te3 thin films were prepared by ion beam sputtering from a Bi/Te fan-shaped compound target. The stoichiometries of all the samples approach the ratio of 2∶3. The XRD results indicate that the major diffraction peaks of the film match with those of Bi2Te3. The film growth exhibits preferred orientation at（015） phase and several Bi,[Bi,Te]impurity peaks are observed. Hall and Seebeck coefficient measurement reveals that all the samples are n-type with conductivity of 105 Sm-1. This confirms that the samples have nice thermoelectrically properties. The samples seebeck coefficients,with maximum of -168 μVK-1 and minimum of -32 μVK-1,are obtained from various preparation conditions. Among them,the sample annealed at 300 ℃ with stoichiometry of 0.69 has the highest Power Factor of 1.1×10-3 Wm-1K-2.

关 键 词：凝聚态物理 离子束溅射 Bi2Te3薄膜 热电材料 晶体结构 电学性能 热处理 

分 类 号：TN304[电子电信—物理电子学] O469[理学—凝聚态物理]