高压高速SOI-LIGBT的研制  

The Development of High Voltage/High Speed SOI LIGBT

作　　者：杨健[1] 张正 李肇基[1] 李学宁[1] 

机构地区：[1]电子科技大学微电子所,四川成都610054

出　　处：《微电子学》1999年第5期366-369,共4页Microelectronics

基　　金：国家"九五"军事预研项目;国防基金项目

摘　　要：采用数值模拟分析了双降场层SOI-LIGBT击穿电压与SOI层厚度和隔离SiO2层厚度的关系,分析了阳极短路面积比对器件正向压降、关断时间和正向转折电压的影响,并利用硅直接键合(SDB)技术研制出580V的阳极短路SOI-LIGBT。The relationship between breakdown voltage of SOI LIGBTs using double field reduction layers and thickness of SOI layers and isolation SiO 2 layers is analyzed with numerical simulation Effects of anode shorted area ratio on the on state voltage,turn off time and forward snap back voltage of the device are examined Using silicon direct bonding(SDB) technology,anode shorted SOI LIGBTs have been manufactured,which have a breakdown voltage of 580 V and turn off time of 250 ns

关 键 词：横向绝缘棚 双极晶体管 智能功率IC SOI-LIGBT 

分 类 号：TN322.8[电子电信—物理电子学] TN43