用于制备GaN的硅基ZnO过渡层的高温热处理研究  

Characterization of ZnO Thin Film Treated With High Temperature for Buffer Layer of GaN on Silicon Substrate

作　　者：李剑光[1] 叶志镇[1] 汪雷[1] 赵炳辉[1] 袁骏[1] 阙端麟[1] 

机构地区：[1]浙江大学,硅材料国家重点实验室杭州310027

出　　处：《Journal of Semiconductors》1999年第10期862-866,共5页半导体学报（英文版）

摘　　要：我们利用直流反应磁控溅射法制备出在Ｃ轴上取向高度一致的ＺｎＯ 薄膜，为了进一步检验作为高温生长ＧａＮ 材料衬底的可行性，我们模拟衬底加热，进行了样品高温热处理．比较了样品高温热处理前后的晶体性能，发现热处理后使ＺｎＯ 薄膜的吸附氧明显减少，孔隙率降低，薄膜的密度增加，有效地提高了薄膜的晶体性能；在ＺｎＯ 和硅两者的界面上形成了一个富锌区．所以，用我们的方法制备的ＺｎＯ薄膜有望成为外延ＧａＮThe high C \|oriented ZnO thin film was prepared by DC reaction magnetron sputtering. Simulated the situation of growing the GaN thin film, the samples were traeted with high temperature in order to verify the possibility of using them as the buffer layer. After annealing, the results showed that a rich zone of Zinc was formed in the interface between the ZnO and the silicon substrate. The absorbed oxygen in the thin films decreased and the porosity of the thin films was reduced, then the properties of the ZnO thin films were improved. Therefore, the ZnO thin film prepared by DC reaction magnetron sputtering is suitable to the buffer layer for growing GaN single\|crystal thin film.

关 键 词：氮化镓 氧化锌 硅基氧化锌 半导体薄膜技术 制备 

分 类 号：TN304.21[电子电信—物理电子学] TN304.23