用氧等离子体激活处理的低温硅片直接键合技术  

Low Temperature Silicon Direct Bonding With Oxygen Plasma Activating

作　　者：肖天龙 茅盘松[1] 袁璟 

机构地区：[1]东南大学微电子中心,南京210096

出　　处：《半导体技术》1999年第5期19-22,共4页Semiconductor Technology

摘　　要：针对在Ｍ ＥＭＳ加工中所要求的低温键合，提出了一种用氧等离子体激活处理来降低退火温度的低温硅片直接键合技术。研究了低温ＳＤＢ的特性并得出了经过氧等离子体处理的硅片界面能比常规同条件的ＳＤＢ提高近１０ 倍的结论。最后详细探讨了其键合机理。One low temperature silicon direct bonding technology which can be used in manufacturing of MEMS is proposed in this paper.Its property is investigated,and the conclusion is draw that oxygen plasma activating can increase the strength of bonding interface ten times that of convention at SDB in the same condition.The mechanism of bonding has been discussed in details at last.

关 键 词：MEMS 低温 硅片直接键合 氧等离子体激活 IC 

分 类 号：TN305.2[电子电信—物理电子学] TN405