Cu掺杂ZnO的光致发光光谱  

Photoluminescence Spectra of Cu Doped ZnO

作　　者：许露[1] 梁红伟[1] 刘远达[1] 李春野[1] 冯秋菊[1] 柳阳[1] 李国兴[2] 杜国同[1,2] 

机构地区：[1]大连理工大学物理与光电工程学院,大连116024 [2]吉林大学电子工程系集成光电子国家重点实验室,长春130023

出　　处：《材料导报》2011年第3期36-42,共7页Materials Reports

基　　金：自然科学基金(60976010;10804040;10804014;60877020;0532080);大连理工大学理科科研基金;大连理工大学青年教师培养基金;辽宁省博士启动基金(20081081)

摘　　要：ZnO是宽禁带半导体,室温下禁带宽度为3.37eV,激子束缚能高达60meV,是制备光电器件的优选材料。然而,p型掺杂仍是亟待解决的问题。ⅠB元素Cu被认为在ZnO中产生受主能级,可以实现ZnO的p型掺杂。综述了各种制备方法、制备条件和激发条件下得到的Cu掺杂ZnO薄膜、纳米线和纳米棒的光致发光谱和机理,总结出Cu掺杂ZnO光致发光谱的带边发射会因为Cu的掺杂强度降低,或出现发射中心红移等现象。可见光区域由于Cu掺杂会产生新的蓝光、绿光和橙光发射峰,蓝光发射峰可能与Cu2+-Cu+跃迁或VZn和Zni有关;绿光发射峰可能与Cu杂质或VO-VZn跃迁有关,Cu掺杂还可能引入非辐射复合的点缺陷中心;橙光发射峰则可能由于Cu杂质受主能级向深施主能级跃迁而产生。ZnO is a wide band gap semiconductor, with band gap of 3. 37eV and exciton binding energy of 60 meV, being an optimalizing material for photoelectric device preparation. However, p-type doping is still a problem to be solved. IB element Cu is considered in ZnO to form acceptor levels, which can realize p-type doping of ZnO. The photoluminescence （PL） spectra of Cu doped ZnO films, nanowires and nanorods prepared by different methods, growth conditions and excitation conditions and mechanisms are reviewed. It is summarized that the intensity of near band edge emission （NBE） of Cu ： ZnO will be reduced because of Cu doping, or the center of NBE would have a red shift. As for the visible region Cu doping will introduce new blue, green and orange emission peaks. Blue emission peak may be associated with Cu2＋ -Cu＋ transition or Vzn and Zn ; green emission peaks may be related to Cu impurities or Vo-Vzn transition, also non-radiative recombination of point defects center may be introduced by Cu doping; orange emission peaks may be due to transitions between Cu impurity acceptor level and deep donor level.

关 键 词：Cu掺杂ZnO 光致发光 带边发射 可见光发射 

分 类 号：TB[一般工业技术]