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作 者:杨雪[1] 汪怡平[2] 郭延龙[1] 曹海源[1] 米朝伟[1] 田方涛[1]
机构地区:[1]武汉军械士官学校光电技术研究所,湖北武汉430075 [2]湖南大学汽车车身先进设计制造国家重点实验室,湖南长沙410082
出 处:《红外与激光工程》2011年第1期46-51,共6页Infrared and Laser Engineering
基 金:国家863课题资助项目;国家973课题资助项目(613108020303);武汉军械士官学校青年教员科技创新基金项目
摘 要:针对传统方法制备类金刚石(DLC)膜存在的3~5μm波段红外透过率低这一难题,采用飞秒脉冲激光沉积(PLD)法在红外材料硅基底上镀制DLC膜。重点考查了靶材与基片的间距、背景气压、激光单脉冲能量、负偏压、温度以及掺硅量等工艺参数对其透过率的影响,经过大量的实验与优化分析,总结出一套有效的脉冲激光沉积DLC膜工艺来制备优良的光学保护增透膜。相比传统工艺,大大提高了3~5μm波段的平均红外透过率,在硅基底上单面镀制DLC膜的最高红外透过率达到了68.2%,与理论最高值的68.7%仅相差0.5%。It is well know that the infrared transmittance is low in 3-5μm wave band when the diamondlike carbon (DLC) film is prepared by traditional pulse laser deposition. Aiming at this problem, an approach based on the femtosecond pulse laser deposition (PLD) method was proposed to plate DLC film on silicon wafer. The effect of some parameters such as the spacing between the target and substrate, background gas pressure, single pulse energy, negative bias voltage, temperature and doping silicon on transmittance were also studied. A set of effective technology to prepare an excellent optical protection antireflective film was summed up based on plentiful experiments and optimal analysis. Compared with traditional process, this process greatly enhanced 3-5μm wave band average infrared transmittance, and compared with the highest theory result 68.7%, the highest infrared transmittance will reach 68.2%, just 0.5% behind.
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